2SJ548

• Low on-resistance RDS(on) = 0.075Ω typ. 

• Low drive current. 

• 4V gate drive devices.     

• High speed switching.

Outline

TO-220FM

1. Gate  2. Drain  3. Source

Absolute Maximum Ratings (Ta = 25°C)

Note: 

1. PW ≤ 10µs, duty cycle ≤ 1 % 

2. Value at Tc = 25°C 

3. Value at Tch = 25°C, Rg ≥ 50 Ω

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Richtung：

Silicon P Channel MOS FET High Speed Power Switching